For an up-to-date publications list, please visit my Google Scholar Profile [https://scholar.google.com/citations?hl=en&user=CClEdEEAAAAJ].
Please reach out to reet.chaudhuri@cornell.edu if you need a copy of any publication for your personal use
Embedded Files
BOOK
BOOK
"Integrated Electronics on Aluminum Nitride : Materials and Devices"
Springer Nature Publications, 2022
"Integrated Electronics on Aluminum Nitride : Materials and Devices"
Springer Nature Publications, 2022
PATENTS and INVENTIONS
PATENTS and INVENTIONS
PT1. RF High-Electron-Mobility Transistors including Group III-N Stress Neutral Barrier Layers with High Breakdown Voltages
PT1. RF High-Electron-Mobility Transistors including Group III-N Stress Neutral Barrier Layers with High Breakdown Voltages
US Patent 11710785B2, Granted Jul 2023.
PT2. High-voltage p-channel FET based on III-Nitride Heterostructures
PT2. High-voltage p-channel FET based on III-Nitride Heterostructures
US Patent 11522080B2, Granted Dec 2022
PT3. Polarization-induced 2D Hole Gases for High-voltage p-channel Transistors
PT3. Polarization-induced 2D Hole Gases for High-voltage p-channel Transistors
US Patent US11158709B2, Granted Oct 2021.
PT4. Integrated electronics on the aluminum nitride platform
PT4. Integrated electronics on the aluminum nitride platform
US Patent Application No.: US2022/0199782, Filed 2021
PUBLICATION HIGHLIGHTS
PUBLICATION HIGHLIGHTS
A polarization-induced 2D hole gas in undoped gallium nitride quantum wells
A polarization-induced 2D hole gas in undoped gallium nitride quantum wells
Science (2019) [Direct download link]
R. Chaudhuri, S. Bader, Z. Chen, D. Muller, H. Xing, D. Jena
Featured in Cornell Chronicle, Semiconductor Today, EurekaAlert!, ScienceDaily, Phys.org
(Editor's Feature) A Hole Flatland :
When two distinct materials are placed on top of each other, the difference in polarization between the two layers can induce charge carriers at the interface. Many such two-dimensional (2D) electron gases have been observed, but engineering a 2D hole gas without the help of doping has been much trickier. Chaudhuri et al. used molecular beam epitaxy to grow a layer of gallium nitride on top of aluminum nitride without introducing dopants. This approach resulted in a high-density 2D hole gas at the interface in this technologically relevant system.
High conductivity Polarization-induced 2D hole gases in Undoped GaN/AlN Heterojunctions enabled by Impurity Blocking Layers
High conductivity Polarization-induced 2D hole gases in Undoped GaN/AlN Heterojunctions enabled by Impurity Blocking Layers
Journal of Applied Physics (2021)
Reet Chaudhuri, Zhen Chen, David A. Muller, Huili Grace Xing, Debdeep Jena
High-conductivity undoped GaN/AlN 2D hole gases (2DHGs), the p-type dual of the AlGaN/GaN 2D electron gases (2DEGs), have offered valuable insights into hole transport in GaN and enabled the first GaN GHz RF p-channel FETs. They are an important step towards high-speed and high-power complementary electronics with wide-bandgap semiconductors. These technologically and scientifically relevant 2D hole gases are perceived to be not as robust as the 2DEGs because structurally similar heterostructures exhibit wide variations of the hole density over ∆ps > 7e13 cm−2 , and low mobilities. In this work, we uncover that the variations are tied to undesired dopant impurities such as Silicon and Oxygen floating up from the nucleation interface. By introducing impurity blocking layers (IBLs) in the AlN buffer layer, we eliminate the variability in 2D hole gas densities and transport properties, resulting in a much tighter-control over the 2DHG density variations to ∆ps ≤ 1 e13 cm−2 across growths, and a 3× boost in the Hall mobilities. These changes result in a 2-3× increase in hole conductivity when compared to GaN/AlN structures without IBLs.
GaN/AlN p-channel HFETs with Imax >420 mA/mm and ~20 GHz f_T / f_MAX
GaN/AlN p-channel HFETs with Imax >420 mA/mm and ~20 GHz f_T / f_MAX
IEEE International Electron Devices Meeting (IEDM) (2020)
K. Nomoto, R. Chaudhuri, S. Bader, L. Li, A. Hickman, S. Huang, H Lee, HW Then, A Molnar, HG Xing, and D Jena.
Featured in EE World Online, Industrial News
The first p-channel nitride transistors that break the GHz speed barrier are demonstrated. By leveraging the unique single-channel high-density polarization-induced 2D hole gas of the GaN/AlN heterostructure, best-in-class contact resistances, and scaled T-gate design, p-channel transistor on-currents of 428 mA/mm are observed, with cutoff frequencies in the 20 GHz regime. These observations demonstrate the unique enabling role of the polarization discontinuity at the GaN/AlN semiconductor heterojunction and offer significant hope for a new high-speed and high-voltage wide-bandgap CMOS device platform for applications in RF and power electronics domains.
in-situ crystalline AlN Passivation for Reduced RF Dispersion in strained-channel AlN/GaN/AlN HEMTs
in-situ crystalline AlN Passivation for Reduced RF Dispersion in strained-channel AlN/GaN/AlN HEMTs
physica status solidi (a) (2021)
R. Chaudhuri, A. Hickman, J. Singhal, J. Casamento, H. Xing, D. Jena
Herein, a novel in-situ passivation technique for III-nitride high electron mobility transistors (HEMTs) is demonstrated using a crystalline AlN layer to move the surface states away from the 2D electron gas (2DEG) channel. In-situ passivated AlN/GaN/AlN HEMTs show drastic reduction in DC-RF dispersion of ∼ 2 − 6% compared to ∼ 20% in current state-of-art ex-situ silicon nitride (SiN) passivated AlN HEMTs.
INVITED TALKS
INVITED TALKS
T9. Lab-to-Fab of thermally optimized HEMTs for next-gen power amplifiers.
T9. Lab-to-Fab of thermally optimized HEMTs for next-gen power amplifiers.
Annual Workshop on Compound Semiconductor Materials and Devices, Phoenix, Arizona
February 2026T8. Startups and Innovation : Gandhi to Musk (Panelist)
T8. Startups and Innovation : Gandhi to Musk (Panelist)
Gujarat University, B.K. School of Professional and Management Studies
January 2022T7. Discovery of the undoped 2D hole gas in gallium nitride
T7. Discovery of the undoped 2D hole gas in gallium nitride
International Youth Forum on Physics Research, org by Indian Association of Physics Teachers (IAPT)
October 2021T6. A wHole new World : Devices and Physics enabled by GaN/AlN 2D Hole Gases
T6. A wHole new World : Devices and Physics enabled by GaN/AlN 2D Hole Gases
Device Component Research, Intel Corporation, Oregon, PO
July 2019T5. Wide-bandgap Complementary Nitride FETs
T5. Wide-bandgap Complementary Nitride FETs
Condensed Matter Physics and Material Science (CMPMS) Seminar, TIFR Bombay India
February 2019T4. GaN-on-AlN for Complementary Logic on III-Nitrides
T4. GaN-on-AlN for Complementary Logic on III-Nitrides
IEEE AP/EDS Bombay Chapter Seminar, IIT Bombay India
February 2019T3. Complementary Logic on III-Nitrides : Is AlN the answer?
T3. Complementary Logic on III-Nitrides : Is AlN the answer?
Electronic Devices Society (EDS) Seminar, Cornell University, Ithaca NY
September 2018T2. 2D Electron and Hole Gases in GaN/AlN Heterostructures : Exploiting polarization in III-Nitrides
T2. 2D Electron and Hole Gases in GaN/AlN Heterostructures : Exploiting polarization in III-Nitrides
MSE Graduate Seminar, Cornell University, Ithaca NY
August 2018T1. III-Nitrides as a platform for next-gen power electronics
T1. III-Nitrides as a platform for next-gen power electronics
Dept. of Applied Physics Guest Lecture Series, National Institute of Technology Surat, India
December 2017CONFERENCE PRESENTATIONS
CONFERENCE PRESENTATIONS
C9. High Breakdown, Low Dispersion in MOCVD-grown AlN-buffer HEMTs on 4-inch SiC substrates.
C9. High Breakdown, Low Dispersion in MOCVD-grown AlN-buffer HEMTs on 4-inch SiC substrates.
International Workshop on Nitride Semiconductors (IWN) 2024, Hawai'i USA
November 2024C8. E-Mode AlN/GaN/AlN MOS-HFETs with 3 nm GaN Quantum Well Channels
C8. E-Mode AlN/GaN/AlN MOS-HFETs with 3 nm GaN Quantum Well Channels
Device Research Conference (DRC) 2021 (virtual)
June 2021C7. GHz-speed GaN/AlN p-channel MIS-HFETs with I max of 0.5 A/mm
C7. GHz-speed GaN/AlN p-channel MIS-HFETs with I max of 0.5 A/mm
Device Research Conference (DRC) 2021 (virtual)
June 2021C6. AlN/GaN/AlN HEMTs with in-situ crystalline AlN Passivation for Reduced RF Dispersion
C6. AlN/GaN/AlN HEMTs with in-situ crystalline AlN Passivation for Reduced RF Dispersion
Compound Semiconductor Week 2021 (Virtual)
May 2021C5. Electron-Hole Gas Bilayers in Undoped AlN/GaN/AlN Heterostructures
C5. Electron-Hole Gas Bilayers in Undoped AlN/GaN/AlN Heterostructures
International Conference on Nitride Semiconductors, Bellevue WA
July 2019C4. Polarization-induced 2D Hole Gas in undoped GaN/AlN Heterostructures
C4. Polarization-induced 2D Hole Gas in undoped GaN/AlN Heterostructures
International Workshop on Nitride Semiconductors (IWN) 2018, Kanazawa, Japan
November 2018C3. 2D Hole Gas in GaN/AlN Heterostructures
C3. 2D Hole Gas in GaN/AlN Heterostructures
Electronic Materials Conference (EMC) 2018, UC Santa Barbara, CA
June 2018C2. Molecular Beam Epitaxy of High Mobility AlN/GaN/AlN Quantum Well FET Structures on 6H-SiC
C2. Molecular Beam Epitaxy of High Mobility AlN/GaN/AlN Quantum Well FET Structures on 6H-SiC
International Workshop on Physics of Semiconductor Devices (IWPSD) 2017, New Delhi, India
December 2017C1. GaN/AlN Quantum Well FETs on AlN/SiC Platform Using High Temperature MBE Growth
C1. GaN/AlN Quantum Well FETs on AlN/SiC Platform Using High Temperature MBE Growth
Electronic Materials Conference (EMC) 2017, South Bend, IN
June 2017Page updated
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