For an updated publications list, please visit my Google Scholar Profile [https://scholar.google.com/citations?hl=en&user=CClEdEEAAAAJ] or ORCID Profile [https://orcid.org/0000-0002-6562-4506].
Please reach out to rtc77@cornell.edu if you need a copy of any publication here for your personal use.
P11. A polarization-induced 2D hole gas in undoped gallium nitride quantum wells
Science (2019) [Direct download link]
R. Chaudhuri, S. Bader, Z. Chen, D. Muller, H. Xing, D. Jena
Featured in Cornell Chronicle, Semiconductor Today, EurekaAlert!, ScienceDaily, Phys.org
(Editor's Feature) A Hole Flatland :
When two distinct materials are placed on top of each other, the difference in polarization between the two layers can induce charge carriers at the interface. Many such two-dimensional (2D) electron gases have been observed, but engineering a 2D hole gas without the help of doping has been much trickier. Chaudhuri et al. used molecular beam epitaxy to grow a layer of gallium nitride on top of aluminum nitride without introducing dopants. This approach resulted in a high-density 2D hole gas at the interface in this technologically relevant system.
P10. Molecular Beam Epitaxy Growth of Large-Area GaN/AlN 2D Hole Gas Heterostructures
physica status solidi (b) (2020)
Reet Chaudhuri, S. Bader, Z. Chen, D. Muller, H. Xing , D. Jena
A study of the growth conditions during molecular beam epitaxy (MBE) growth of metal‐polar GaN/AlN heterostructures is presented for optimal transport of the polarization‐induced 2D hole gases (2DHGs), along with the demonstration of large‐area growths of the 2DHGs on 2 in. wafers using optimized growth conditions.
P9. High-Mobility Two-Dimentional Electron Gases at Al xGa 1−xN/GaN Heterostructures Grown by PA-MBE
Bulletin of the American Physical Society ( 2020 )
Y. Ren, Y. Cho, A.Hickman, Reet Chaudhuri, P. Dang , M Lee, W. Zhao, H. Xing , D. Jena
P8. GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current
IEEE International Electron Devices Meeting ( IEDM ) (2019)
S. Bader, Reet Chaudhuri, A. Hickman, K. Nomoto, S. Bharadwaj , H.W. Then, H. Xin g , D. Jena
P7. Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN
Applied Physics Letters (2019)
J Casamento, J. Wright, Reet Chaudhuri, H. Xing , D. Jena
P6. GaN-Based FETs with Laterally-Gated Multi-2DEG Channels for High Power and Linearity
ECS Transactions (2019)
K. Shinohara, C. King , E. Regan, J. Bergman, A. Carter, A. Arias, M. Urteaga, B. Brar, R. Page, Reet Chaudhuri, SM Islam, H. Xing , D. Jena
P5. Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas
Appl. Phys. Lett. 114, 253501 (2019)
S.J. Bader, R. Chaudhuri, M. Schubert, H. Then, H. Xing, D. Jena
P3. High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs
IEEE Electron Device Letters (2018)
A. Hickman, R. Chaudhuri, S.J. Bade, K. Nomoto, K. Lee, H. Xing, D. Jena
P3. GaN-based multi-channel transistors with lateral gate for linear and efficient millimeter-wave power amplifiers
IEEE MTT-S International Microwave S y m p osium ( IMS ), (2019)
K. Shinohara, C. King , E. Regan, J. Bergman, A. Carter, A. Arias, M. Urteaga, B. Brar, R. Page, Reet Chaudhuri, SM Islam, H. Xing , D. Jena
P2. Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas
IEEE Electron Device Letters, vol. 39, no. 12 (2018)
S.J. Bader, R. Chaudhuri, K. Nomoto, A. Hickman, H. Then, Z. Chen, D. Muller, H. Xing, D. Jena
P1. Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN
Appl. Phys. Lett. 111, 073102 (2017)
H. Condori Quispe, S. M. Islam, S.J. Bader, A. Chanana, K. Lee, R. Chaudhuri, A. Nahata, H. Xing, D. Jena and B. Sensale-Rodriguez
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