P11. A polarization-induced 2D hole gas in undoped gallium nitride quantum wells

Science (2019) [Direct download link]

R. Chaudhuri, S. Bader, Z. Chen, D. Muller, H. Xing, D. Jena

Featured in Cornell Chronicle, Semiconductor Today, EurekaAlert!, ScienceDaily, Phys.org

(Editor's Feature) A Hole Flatland :

When two distinct materials are placed on top of each other, the difference in polarization between the two layers can induce charge carriers at the interface. Many such two-dimensional (2D) electron gases have been observed, but engineering a 2D hole gas without the help of doping has been much trickier. Chaudhuri et al. used molecular beam epitaxy to grow a layer of gallium nitride on top of aluminum nitride without introducing dopants. This approach resulted in a high-density 2D hole gas at the interface in this technologically relevant system.

P10. Molecular Beam Epitaxy Growth of Large-Area GaN/AlN 2D Hole Gas Heterostructures

physica status solidi (b) (2020)

Reet Chaudhuri, S. Bader, Z. Chen, D. Muller, H. Xing , D. Jena

A study of the growth conditions during molecular beam epitaxy (MBE) growth of metal‐polar GaN/AlN heterostructures is presented for optimal transport of the polarization‐induced 2D hole gases (2DHGs), along with the demonstration of large‐area growths of the 2DHGs on 2 in. wafers using optimized growth conditions.

P9. High-Mobility Two-Dimentional Electron Gases at Al xGa 1−xN/GaN Heterostructures Grown by PA-MBE

Bulletin of the American Physical Society ( 2020 )

Y. Ren, Y. Cho, A.Hickman, Reet Chaudhuri, P. Dang , M Lee, W. Zhao, H. Xing , D. Jena

P8. GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current

IEEE International Electron Devices Meeting ( IEDM ) (2019)

S. Bader, Reet Chaudhuri, A. Hickman, K. Nomoto, S. Bharadwaj , H.W. Then, H. Xin g , D. Jena

P7. Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN

Applied Physics Letters (2019)

J Casamento, J. Wright, Reet Chaudhuri, H. Xing , D. Jena

P6. GaN-Based FETs with Laterally-Gated Multi-2DEG Channels for High Power and Linearity

ECS Transactions (2019)

K. Shinohara, C. King , E. Regan, J. Bergman, A. Carter, A. Arias, M. Urteaga, B. Brar, R. Page, Reet Chaudhuri, SM Islam, H. Xing , D. Jena

P5. Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas

Appl. Phys. Lett. 114, 253501 (2019)

S.J. Bader, R. Chaudhuri, M. Schubert, H. Then, H. Xing, D. Jena

P3. High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs

IEEE Electron Device Letters (2018)

A. Hickman, R. Chaudhuri, S.J. Bade, K. Nomoto, K. Lee, H. Xing, D. Jena

P3. GaN-based multi-channel transistors with lateral gate for linear and efficient millimeter-wave power amplifiers

IEEE MTT-S International Microwave S y m p osium ( IMS ), (2019)

K. Shinohara, C. King , E. Regan, J. Bergman, A. Carter, A. Arias, M. Urteaga, B. Brar, R. Page, Reet Chaudhuri, SM Islam, H. Xing , D. Jena

P2. Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas

IEEE Electron Device Letters, vol. 39, no. 12 (2018)

S.J. Bader, R. Chaudhuri, K. Nomoto, A. Hickman, H. Then, Z. Chen, D. Muller, H. Xing, D. Jena

P1. Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN

Appl. Phys. Lett. 111, 073102 (2017)

H. Condori Quispe, S. M. Islam, S.J. Bader, A. Chanana, K. Lee, R. Chaudhuri, A. Nahata, H. Xing, D. Jena and B. Sensale-Rodriguez

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