Logic Device Engineer / Data Scientist
Intel Corporation, Hillsboro OR

Specializations : Semiconductor device (transistor) development, III-nitride semiconductor growth and devices, Carrier transport physics

Emails :
rchaudhuri [at] cornell [dot] edu
chaudhuri [dot] reet [at] gmail [dot] com

Full CV [pdf]; 1 page Resume [pdf]

Full Publications :
Google Scholar, LinkedIn, ORCID

Book : Integrated Electronics on Aluminum Nitride : Materials and Devices, Springer Nature. [Link]


I am a Logic Device Engineer in Technology Development at Intel, where I use semiconductor device physics for developing next-generation transistors to keep Moore’s Law alive.

I earned my Ph.D. from Cornell University USA under the guidance of Prof Debdeep Jena, specializing in III-nitride semiconductor material and RF device physics. Working at the intersection of solid-state physics, electronics and materials science, my doctoral research work laid the foundation for integrated high-frequency electronics on the ultra-wide bandgap aluminum nitride (AlN) platform. My scientific discovery of the long-missing undoped mobile holes in gallium nitride in 2019 led to new insights into wide bandgap semiconductor physics, and enabled record high speed transistors crucial for future, energy-efficient electronics. 

I have co-authored 25+ peer-reviewed journal articles, 20+ conference presentations, 8 invited talks and 4 patents during the course of my PhD. I have also co-founded an early-stage start-up Soctera Inc. aiming to commercialize my research on aluminium-nitride (AlN) based high-power RF transistors.  

Before joining Cornell, worked at Nvidia an ASIC Design Engineer. I got my Bachelor of Technology degree from NIT Tiruchirapalli in Electronics, and Master of Science in Applied Physics from Cornell University.

"Somewhere, something incredible is waiting to be known.

Carl Sagan