Postdoctoral Associate, Electrical and Computer Engineering
Specialization : Semiconductor device development, III-nitride semiconductor physics, epitaxial growth
Cornell University, Ithaca NY
Office : Duffield Hall 358
Email : rtc77 [at] cornell [dot] edu
Full CV [pdf]
I am currently a post-doctoral associate in Dept. of Electrical and Computer Engineering at Cornell University, in the lab of Prof. Debdeep Jena and Prof Huili Grace Xing. I recently earned my Ph.D. under the guidance of Prof. Jena, working on enabling integrated RF electronics on the AlN platform through careful material growth and electronic device development.
I use careful heterostructure design and crystal growths to make high-performance electron- and hole-channel transistors on AlN. A major highlight has been my discovery of the long-missing undoped GaN/AlN 2D holes, which enabled the p-channel III-nitride transistors to break the GHz-speed barrier.
I have co-authored 20+ peer-reviewed journal articles, 20+ conference presentations, 6 invited talks and 4 patents during the course of my PhD. My research on aluminium-nitride (AlN) based high-power RF transistors has been commercialized by the early-stage start-up Soctera Inc.
My broader research interests include :
Development of novel electronic and optoelectronic devices by
Epitaxial growth of semiconductor heterostructures, mainly using Molecular Beam Epitaxy (MBE), and
Understanding the physics of carrier transport and their effect on the electronic devices.
Before joining Cornell, I got my Bachelor of Technology degree from NIT Tiruchirapalli in Electronics, and worked at Nvidia an ASIC Design Engineer in India. I earned my Masters in Applied Physics from Cornell University, advised by Prof. Robert Thorne.
"Somewhere, something incredible is waiting to be known.”