Dec 2022 Update :

My PhD dissertation on "Integrated Electronics on Aluminum Nitride : Materials and Devices" has now been published as a pedagogical book by Springer Nature.

Any comments/suggestions are welcome!

Logic Device Engineer
Intel Corporation, Hillsboro OR

Specializations : Semiconductor device (transistor) development, III-nitride semiconductor growth, GaN RF transistors

Emails :
rchaudhuri [at] cornell [dot] edu
chaudhuri [dot] reet [at] gmail [dot] com


Full CV [pdf]; 1 page Resume [pdf]

Publications :
Google Scholar, LinkedIn, ORCID

Book : Integrated Electronics on Aluminum Nitride : Materials and Devices, Springer Nature. [Link]

Hi.

I am a Logic Device Engineer in Technology Development at Intel, where I use semiconductor device physics for developing next-generation transistors to keep Moore’s Law alive.

I earned my Ph.D. in 2021 in Semiconductor device physics (ECE) at Cornell University, USA under the guidance of Prof Debdeep Jena, working at the intersection of solid-state physics, electronics and materials science. My doctoral research work enabled integrated high-frequency electronics on the aluminum nitride (AlN) platform through careful material growth and electronic device development. My scientific discovery of the long-missing undoped mobile holes in gallium nitride in 2019 led to new insights into wide bandgap semiconductor physics, and enabled record high speed transistors crucial for future, energy-efficient electronics.

I have co-authored 20+ peer-reviewed journal articles, 20+ conference presentations, 6 invited talks and 4 patents during the course of my PhD. I also co-founded an early-stage start-up Soctera Inc. to commercialize my research on aluminium-nitride (AlN) based high-power RF transistors, performing extensive customer discovery and securing small-business funding from the National Science Foundation.

My broader research interests include :

  • Development of transistor fabrication process for logic and RF applications

  • Epitaxial growth of semiconductor heterostructures using Molecular Beam Epitaxy (MBE)

  • Understanding the effect of semiconductor material physics and physics of carrier transport on the transistor performance.

Before joining Cornell, I got my Bachelor of Technology degree from NIT Tiruchirapalli in Electronics, and worked at Nvidia an ASIC Design Engineer in India. I earned my Masters in Applied Physics from Cornell University, advised by Prof. Robert Thorne.

"Somewhere, something incredible is waiting to be known.

Carl Sagan