Ph.D. Candidate,
Electrical and Computer Engineering

Specialization : III-nitride semiconductor physics and devices

Cornell University, Ithaca NY

Office : Duffield Hall 358

Email : rtc77 [at] cornell [dot] edu

Full CV [pdf]

Resume [pdf]

Google Scholar, LinkedIn, ORCID


I am currently a Ph.D. candidate at Cornell University under Prof. Debdeep Jena and Prof Huili Grace Xing. I co-founded Soctera Inc., an early stage startup that spun out of my doctoral research on aluminium-nitride (AlN) based high-power RF transistors.

My doctoral research focusses on making an electrical insulator AlN, conduct using polarization-doping. I use careful heterostructure design and crystal growths to enable and integrate high-performance electron and hole channel transistors on AlN. A major highlight has been my discovery of the long-missing undoped GaN/AlN 2D holes, which enabled the p-channel III-nitride transistors to break the GHz-speed barrier.

My broader research interests include :

  • Design of novel electronic and optoelectronic devices by

  • Epitaxial growth of III-Nitride semiconductor heterostructures, mainly using Molecular Beam Epitaxy (MBE), and

  • Understanding the physics of carrier transport in III-Nitride semiconductor heterostructures.

Before joining Cornell, I got my Bachelor of Technology degree from NIT Tiruchirapalli in Electronics, and worked at Nvidia an ASIC Design Engineer in India. I earned my Masters in Applied Physics from Cornell University, advised by Prof. Robert Thorne.

"Somewhere, something incredible is waiting to be known.

Carl Sagan