I am currently a post-doctoral scholar in Dept. of Electrical and Computer Engineering at Cornell University, in the lab of Prof. Debdeep Jena and Prof Huili Grace Xing. I recently earned my Ph.D. under the guidance of Prof. Jena, working on designing and enabling integrated RF electronics on the AlN platform through material growth and device design.
I use careful heterostructure design and crystal growths to make high-performance electron- and hole-channel transistors on AlN. A major highlight has been my discovery of the long-missing undoped GaN/AlN 2D holes, which enabled the p-channel III-nitride transistors to break the GHz-speed barrier.
My doctoral research on aluminium-nitride (AlN) based high-power RF transistors has been commercialized by the early-stage start-up Soctera Inc.
My broader research interests include :
Design of novel electronic and optoelectronic devices by
Epitaxial growth of III-Nitride semiconductor heterostructures, mainly using Molecular Beam Epitaxy (MBE), and
Understanding the physics of carrier transport and their effect on the electronic devices.
Before joining Cornell, I got my Bachelor of Technology degree from NIT Tiruchirapalli in Electronics, and worked at Nvidia an ASIC Design Engineer in India. I earned my Masters in Applied Physics from Cornell University, advised by Prof. Robert Thorne.
"Somewhere, something incredible is waiting to be known.”