INVITED TALKS
INVITED TALKS
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T8. Startups and Innovation : Gandhi to Musk (Panelist)
T8. Startups and Innovation : Gandhi to Musk (Panelist)
Gujarat University, B.K. School of Professional and Management Studies
January 2022T7. Discovery of the undoped 2D hole gas in gallium nitride
T7. Discovery of the undoped 2D hole gas in gallium nitride
International Youth Forum on Physics Research, org by Indian Association of Physics Teachers (IAPT)
October 2021T6. A wHole new World : Devices and Physics enabled by GaN/AlN 2D Hole Gases
T6. A wHole new World : Devices and Physics enabled by GaN/AlN 2D Hole Gases
Device Component Research, Intel Corporation, Oregon, PO
July 2019T5. Wide-bandgap Complementary Nitride FETs
T5. Wide-bandgap Complementary Nitride FETs
Condensed Matter Physics and Material Science (CMPMS) Seminar, TIFR Bombay India
February 2019T4. GaN-on-AlN for Complementary Logic on III-Nitrides
T4. GaN-on-AlN for Complementary Logic on III-Nitrides
IEEE AP/EDS Bombay Chapter Seminar, IIT Bombay India
February 2019T3. Complementary Logic on III-Nitrides : Is AlN the answer?
T3. Complementary Logic on III-Nitrides : Is AlN the answer?
Electronic Devices Society (EDS) Seminar, Cornell University, Ithaca NY
September 2018T2. 2D Electron and Hole Gases in GaN/AlN Heterostructures : Exploiting polarization in III-Nitrides
T2. 2D Electron and Hole Gases in GaN/AlN Heterostructures : Exploiting polarization in III-Nitrides
MSE Graduate Seminar, Cornell University, Ithaca NY
August 2018T1. III-Nitrides as a platform for next-gen power electronics
T1. III-Nitrides as a platform for next-gen power electronics
Dept. of Applied Physics Guest Lecture Series, National Institute of Technology Surat, India
December 2017CONFERENCE PRESENTATIONS
CONFERENCE PRESENTATIONS
C8. E-Mode AlN/GaN/AlN MOS-HFETs with 3 nm GaN Quantum Well Channels
C8. E-Mode AlN/GaN/AlN MOS-HFETs with 3 nm GaN Quantum Well Channels
Device Research Conference (DRC) 2021 (virtual)
June 2021C7. GHz-speed GaN/AlN p-channel MIS-HFETs with I max of 0.5 A/mm
C7. GHz-speed GaN/AlN p-channel MIS-HFETs with I max of 0.5 A/mm
Device Research Conference (DRC) 2021 (virtual)
June 2021C6. AlN/GaN/AlN HEMTs with in-situ crystalline AlN Passivation for Reduced RF Dispersion
C6. AlN/GaN/AlN HEMTs with in-situ crystalline AlN Passivation for Reduced RF Dispersion
Compound Semiconductor Week 2021 (Virtual)
May 2021C5. Electron-Hole Gas Bilayers in Undoped AlN/GaN/AlN Heterostructures
C5. Electron-Hole Gas Bilayers in Undoped AlN/GaN/AlN Heterostructures
International Conference on Nitride Semiconductors, Bellevue WA
July 2019C4. Polarization-induced 2D Hole Gas in undoped GaN/AlN Heterostructures
C4. Polarization-induced 2D Hole Gas in undoped GaN/AlN Heterostructures
International Workshop on Nitride Semiconductors (IWN) 2018, Kanazawa, Japan
November 2018Reet Chaudhuri, Sam Bader, Zhen Chen, David Muller, Huili (Grace) Xing, Debdeep Jena
C3. 2D Hole Gas in GaN/AlN Heterostructures
C3. 2D Hole Gas in GaN/AlN Heterostructures
Electronic Materials Conference (EMC) 2018, UC Santa Barbara, CA
June 2018Reet Chaudhuri, Sam Bader, Zhen Chen, David Muller, Huili (Grace) Xing, Debdeep Jena
C2. Molecular Beam Epitaxy of High Mobility AlN/GaN/AlN Quantum Well FET Structures on 6H-SiC
C2. Molecular Beam Epitaxy of High Mobility AlN/GaN/AlN Quantum Well FET Structures on 6H-SiC
International Workshop on Physics of Semiconductor Devices (IWPSD) 2017, New Delhi, India
December 2017Reet Chaudhuri, Sam Bader, Huili (Grace) Xing, Debdeep Jena
C1. GaN/AlN Quantum Well FETs on AlN/SiC Platform Using High Temperature MBE Growth
C1. GaN/AlN Quantum Well FETs on AlN/SiC Platform Using High Temperature MBE Growth
Electronic Materials Conference (EMC) 2017, South Bend, IN
June 2017Reet Chaudhuri, SM Islam, Sam Bader, Huili (Grace) Xing, Debdeep Jena
Selected Conference Presentations by co-authors
Selected Conference Presentations by co-authors
Co18. Overcoming Acoustoelectric Material Limits of Piezoelectric Resonators using Epitaxial Aluminum Nitride.
Co18. Overcoming Acoustoelectric Material Limits of Piezoelectric Resonators using Epitaxial Aluminum Nitride.
APS March Meeting, virtual
March 2021Wenwen Zhao, Mohammad Asadi, Lei Li, Reet Chaudhuri, Kazuki Nomoto, Huili Xing, James Hwang, and Debdeep Jena.
Co17. Polarization-Induced 2D Hole Gases in Undoped InGaN/AlN Heterostructures Grown on Single-Crystal AlN Substrates.
Co17. Polarization-Induced 2D Hole Gases in Undoped InGaN/AlN Heterostructures Grown on Single-Crystal AlN Substrates.
Electronics Materials Conference (EMC), virtual
June 2021Zexuan Zhang, Jimy Encomendero, Reet Chaudhuri, Yongjin Cho, Vladamir Protasenko, Kazuki Nomoto, Kevin Lee, Masato Toita, Huili Grace Xing, and Debdeep Jena.
Co16. Polarization-induced 2D hole gases in pseudomorphic GaN/AlN heterostructures on single-crystal AlN substrates.
Co16. Polarization-induced 2D hole gases in pseudomorphic GaN/AlN heterostructures on single-crystal AlN substrates.
Lester Eastman Conference (LEC), South Bend, IN
August 2021Zexuan Zhang, Jimy Encomendero, Reet Chaudhuri, Yongjin Cho, Vladamir Protasenko, Kazuki Nomoto, Kevin Lee, Masato Toita, Huili Grace Xing, and Debdeep Jena.
Co15. 2.2 W/mm Output Power at 94 GHz in AlN/GaN/AlN HEMTs.
Co15. 2.2 W/mm Output Power at 94 GHz in AlN/GaN/AlN HEMTs.
Lester Eastman Conference (LEC), South Bend, IN
August 2021Austin Hickman, Reet Chaudhuri, Neil Moser, Micheal Elliot, Kazuki Nomoto, Lei Li, James CM Hwang, Huili Grace Xing, and Debdeep Jena.
Co14. Polarization-induced 2D Electron and Hole gases Homoepitaxially grown on single-crystal AlN substrates.
Co14. Polarization-induced 2D Electron and Hole gases Homoepitaxially grown on single-crystal AlN substrates.
Electronics Materials Conference (EMC), virtual
June 2021Jimy Encomendero, Zexuan Zhang, Reet Chaudhuri, Kevin Lee, Huili Grace Xing, and Debdeep Jena.
Co13. High-Mobility Two-Dimentional Electron Gases at Al x Ga 1−x N/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy.
Co13. High-Mobility Two-Dimentional Electron Gases at Al x Ga 1−x N/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy.
APS March Meeting, virtual
March 2020Yuxing Ren, Yongjin Cho, Austin Hickman, Reet Chaudhuri, Phillip Dang, Menyoung Lee, Wenwen Zhao, Zexuan Zhang, Huili Xing, and Debdeep Jena.
Co12. Record Small-Signal RF and Off-State Breakdown Characteristics in AlN/GaN/AlN HEMTs.
Co12. Record Small-Signal RF and Off-State Breakdown Characteristics in AlN/GaN/AlN HEMTs.
International Conference on Nitride Semiconductors (ICNS), Bellevue WA
July 2019Austin Hickman, Reet Chaudhuri, Samuel Bader, Kazuki Nomoto, SM Islam, Huili Grace Xing, and Debdeep Jena
Co11. Mobility of a GaN/AlN 2D hole gas
Co11. Mobility of a GaN/AlN 2D hole gas
International Conference on Nitride Semiconductors (ICNS), Bellevue WA
July 2019Samuel James Bader, Reet Chaudhuri, Huili Grace Xing, and Debdeep Jena
Co10. Contactless Electroreflectance Studies of the Surface Fermi Level in GaN/AlN Heterostructures with Buried 2D Hole Gas.
Co10. Contactless Electroreflectance Studies of the Surface Fermi Level in GaN/AlN Heterostructures with Buried 2D Hole Gas.
International Conference on Nitride Semiconductors (ICNS), Bellevue WA
July 2019Lukasz Janicki, Reet Chaudhuri, Samuel James Bader, Huili Grace Xing, and Debdeep Jena.
Co9. GaN-Based Multi-Channel Transistors with Lateral Gate for Linear and Efficient Millimeter-Wave Power Amplifiers
Co9. GaN-Based Multi-Channel Transistors with Lateral Gate for Linear and Efficient Millimeter-Wave Power Amplifiers
International Microwave Symposium, Boston MA
June 2019C. King, E. Regan, J. Bergman, A. Carter, A. Arias, M. Urteaga, B. Brar, R. Page, R. Chaudhuri, SM Islam, K Nomoto, H. Xing, D. Jena
Co8. GaN-Based FETs with Laterally-Gated Multi-2DEG Channels for High Power and Linearity
Co8. GaN-Based FETs with Laterally-Gated Multi-2DEG Channels for High Power and Linearity
Government Microcircuit Applications and Critical Technology Conference (2019),
March 2019C. King, E. Regan, J. Bergman, A. Carter, A. Arias, M. Urteaga, B. Brar, R. Page, R. Chaudhuri, SM Islam, K Nomoto, H. Xing, D. Jena
Co7. GaN-on-AlN as a Superior Platform for Integrated Wide-bandgap Electronics
Co7. GaN-on-AlN as a Superior Platform for Integrated Wide-bandgap Electronics
Government Microcircuit Applications and Critical Technology Conference (2019),
March 2019S.J. Bader, A. Hickman, R. Chaudhuri, K. Nomoto, H.W. Then, H.G. Xing, D. Jena
Co6. The GaN-on-AlN Platform for Integrated Wide-bandgap Electronics
Co6. The GaN-on-AlN Platform for Integrated Wide-bandgap Electronics
SRC Student Poster at IEEE International Electron Devices Meeting (2018), San Fransisco CA
December 2018S.J. Bader, A. Hickman, R. Chaudhuri, K. Nomoto, H.G. Xing, D. Jena,
Co5. Enhancement-mode GaN-on-AlN p-channel HFETs with record on-current
Co5. Enhancement-mode GaN-on-AlN p-channel HFETs with record on-current
International Workshop on Nitride Semiconductors (IWN) 2018, Kanazawa, Japan
November 2018S.J. Bader, R. Chaudhuri, S. Bharadwaj, A. Hickman, K. Nomoto, H.W. Then, H.G. Xing, D. Jena
Co4. Development of GaN-Based Field Effect Transistors with Laterally-Gated Multiple 2DEG Channels for High Power and Linearity
Co4. Development of GaN-Based Field Effect Transistors with Laterally-Gated Multiple 2DEG Channels for High Power and Linearity
International Workshop on Nitride Semiconductors (IWN) 2018, Kanazawa, Japan
November 2018K. Shinohara, C. King, E. J. Regan, J. Bergman, A. D. Carter, A. Arias, M. Urteaga, B. Brar, R. Page, R. Chaudhuri, SM. Islam, H. Xing, D. Jena
Co3. First RF Strained AlN/GaN/AlN Quantum Well HEMTs on 6H-SiC
Co3. First RF Strained AlN/GaN/AlN Quantum Well HEMTs on 6H-SiC
International Workshop on Nitride Semiconductors (IWN) 2018, Kanazawa, Japan
November 2018A. Hickman, S.J. Bader, R. Chaudhuri, K. Nomoto, S. Islam, H.G. Xing, D. Jena
Co2. Development of High-Power High-Linearity GaN BRIDGE FETs with Laterally Gated Multi-2DEG Channels
Co2. Development of High-Power High-Linearity GaN BRIDGE FETs with Laterally Gated Multi-2DEG Channels
Lester Eastman Conference (LEC) 2018, Columbus, OH
October 2018K. Shinohara*, C. King, E. J. Regan, J. Bergman, A. D. Carter, A. Arias, M. Urteaga, B. Brar, R. Page, R. Chaudhuri, SM. Islam, H. Xing, D. Jena
Co1. High-Voltage Properties of Strained GaN Quantum Well HEMTs on AlN
Co1. High-Voltage Properties of Strained GaN Quantum Well HEMTs on AlN
Compound Semiconductor Week (CSW) 2018, Boston MA
May 2018A. Hickman, S.J. Bader, R. Chaudhuri, K. Nomoto, S. Islam, H.G. Xing, D. Jena
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