PT1. POLARIZATION-INDUCED 2D HOLE GASES FOR HIGH-VOLTAGE P-CHANNEL TRANSISTORS
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PT2. A HIGH-VOLTAGE P-CHANNEL FET BASED ON III-NITRIDE HETEROSTRUCTURES
PT3. RF HIGH-ELECTRON-MOBILITY TRANSISTORS INCLUDING GROUP III-N STRESS NEUTRAL BARRIER LAYERS WITH HIGH BREAKDOWN VOLTAGES
PT4. NEXT GENERATION ELECTRONICS ON THE ULTRAWIDE-BANDGAP ALUMINUM NITRIDE PLATFORM
Provisional application : 16/676083, filed December 19 2020
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