PT1. POLARIZATION-INDUCED 2D HOLE GASES FOR HIGH-VOLTAGE P-CHANNEL TRANSISTORS

PCT Application No. : PCT/US2019/042584

PT2. A HIGH-VOLTAGE P-CHANNEL FET BASED ON III-NITRIDE HETEROSTRUCTURES

Published US 2020/0144407 A1, 7 May 2020

PT3. RF HIGH-ELECTRON-MOBILITY TRANSISTORS INCLUDING GROUP III-N STRESS NEUTRAL BARRIER LAYERS WITH HIGH BREAKDOWN VOLTAGES

Published US 2020/0388701, 10 Dec 2020

PT4. NEXT GENERATION ELECTRONICS ON THE ULTRAWIDE-BANDGAP ALUMINUM NITRIDE PLATFORM

US Patent Application : 16/893,074

Filed 16 December 2020

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