PCT Application No. : PCT/US2019/042584
Filed 19 July 2019
PT2. A HIGH-VOLTAGE P-CHANNEL FET BASED ON III-NITRIDE HETEROSTRUCTURES
US Patent US2020/0144407
Published 7 May 2020
PT3. RF HIGH-ELECTRON-MOBILITY TRANSISTORS INCLUDING GROUP III-N STRESS NEUTRAL BARRIER LAYERS WITH HIGH BREAKDOWN VOLTAGES
US Patent Application : 16/893,074
Filed 4 June 2020
"It is the supreme art of teacher to awaken the joy of creative expression and knowledge"
Albert Einstien