PT1. POLARIZATION-INDUCED 2D HOLE GASES FOR HIGH-VOLTAGE P-CHANNEL TRANSISTORS

PCT Application No. : PCT/US2019/042584

Filed 19 July 2019

PT2. A HIGH-VOLTAGE P-CHANNEL FET BASED ON III-NITRIDE HETEROSTRUCTURES

US Patent US2020/0144407

Published 7 May 2020

PT3. RF HIGH-ELECTRON-MOBILITY TRANSISTORS INCLUDING GROUP III-N STRESS NEUTRAL BARRIER LAYERS WITH HIGH BREAKDOWN VOLTAGES

US Patent Application : 16/893,074

Filed 4 June 2020

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