PT1. POLARIZATION-INDUCED 2D HOLE GASES FOR HIGH-VOLTAGE P-CHANNEL TRANSISTORS
PT2. A HIGH-VOLTAGE P-CHANNEL FET BASED ON III-NITRIDE HETEROSTRUCTURES
PT3. RF HIGH-ELECTRON-MOBILITY TRANSISTORS INCLUDING GROUP III-N STRESS NEUTRAL BARRIER LAYERS WITH HIGH BREAKDOWN VOLTAGES
PT4. NEXT GENERATION ELECTRONICS ON THE ULTRAWIDE-BANDGAP ALUMINUM NITRIDE PLATFORM
US Patent Application : 16/893,074
Filed 16 December 2020
"It is the supreme art of teacher to awaken the joy of creative expression and knowledge"
Albert Einstien