Hi.

I am the CTO of Soctera Inc., a semiconductor start-up I co-founded aiming to commercialize my research on aluminium-nitride (AlN) based high-power RF transistors.  

Previously, I was Logic Device Engineer in Technology Development at Intel, where I used semiconductor device physics for developing next-generation transistors to keep Moore’s Law alive. I also worked at Nvidia as ASIC Verification Engineer on state-of-art GPU RTL designs. 

I earned my Ph.D. from Cornell University USA under the guidance of Prof Debdeep Jena, specializing in III-nitride semiconductor material and RF device physics. Working at the intersection of solid-state physics, electronics and materials science, my doctoral research work laid the foundation for integrated high-frequency electronics on the ultra-wide bandgap aluminum nitride (AlN) platform. My scientific discovery of the long-missing undoped mobile holes in gallium nitride in 2019 led to new insights into wide bandgap semiconductor physics, and enabled record high speed transistors crucial for future, energy-efficient electronics. I have co-authored 30+ peer-reviewed journal articles, 25+ conference presentations, 8 invited talks and 4 patents.