Dec 2022 Update :
My PhD dissertation on "Integrated Electronics on Aluminum Nitride : Materials and Devices" has now been published as a pedagogical book by Springer Nature.
Any comments/suggestions are welcome!
Logic Device Engineer
Intel Corporation, Hillsboro OR
Specializations : Semiconductor device (transistor) development, III-nitride semiconductor growth, GaN RF transistors
Emails :
rchaudhuri [at] cornell [dot] edu
chaudhuri [dot] reet [at] gmail [dot] com
Full CV [pdf]; 1 page Resume [pdf]
Publications :
Google Scholar, LinkedIn, ORCID
Book : Integrated Electronics on Aluminum Nitride : Materials and Devices, Springer Nature. [Link]
Hi.
I am a Logic Device Engineer in Technology Development at Intel, where I use semiconductor device physics for developing next-generation transistors to keep Moore’s Law alive.
I earned my Ph.D. in 2021 in Semiconductor device physics (ECE) at Cornell University, USA under the guidance of Prof Debdeep Jena, working at the intersection of solid-state physics, electronics and materials science. My doctoral research work enabled integrated high-frequency electronics on the aluminum nitride (AlN) platform through careful material growth and electronic device development. My scientific discovery of the long-missing undoped mobile holes in gallium nitride in 2019 led to new insights into wide bandgap semiconductor physics, and enabled record high speed transistors crucial for future, energy-efficient electronics.
I have co-authored 20+ peer-reviewed journal articles, 20+ conference presentations, 6 invited talks and 4 patents during the course of my PhD. I also co-founded an early-stage start-up Soctera Inc. to commercialize my research on aluminium-nitride (AlN) based high-power RF transistors, performing extensive customer discovery and securing small-business funding from the National Science Foundation.
My broader research interests include :
Development of transistor fabrication process for logic and RF applications
Epitaxial growth of semiconductor heterostructures using Molecular Beam Epitaxy (MBE)
Understanding the effect of semiconductor material physics and physics of carrier transport on the transistor performance.
Before joining Cornell, I got my Bachelor of Technology degree from NIT Tiruchirapalli in Electronics, and worked at Nvidia an ASIC Design Engineer in India. I earned my Masters in Applied Physics from Cornell University, advised by Prof. Robert Thorne.
"Somewhere, something incredible is waiting to be known.”
Carl Sagan