Hi.

I am a semiconductor materials and device physicist, engineer and innovator. I am currently the co-founder and CTO of Soctera Inc., a US-based semiconductor start-up I co-founded to commercialize my PhD research on aluminium nitride (AlN)-based high-power RF transistors.

I have 10+ years of research and development experience (academic and industry) in the field of semiconductors across Cornell University, Intel Foundry and Nvidia. I specialize in state-of-art transistor development for digital logic and RF amplification using silicon and novel group III-nitride semiconductors.

My fundamental research interest goes beyond transistors into semiconductor device physics, epitaxial crystal growth and carrier transport physics. I have a strong publication and innovation record with over 30+ peer-reviewed journal publications (incl. high-impact work in Science and IEEE IEDM), 30+ conference/invited talks, 4 patents and a book to his name. My doctoral research work laid the foundation for integrated high-frequency electronics on the ultra-wide bandgap AlN platform, and my scientific discovery of the long-missing undoped mobile holes in gallium nitride (GaN) in 2019 led to new insights into wide-bandgap semiconductor physics. 

I am the recipient of Outstanding Doctoral research award from Cornell University. I also hold M.S. degrees in Electrical Engineering and Applied Physics from Cornell, and B.Tech. from National Institute of Technology, Tiruchirapalli (India).