REET CHAUDHURI, Ph.D.

Co-founder and CTO
Soctera, Inc.

Specializations : III-nitride semiconductor growth and devices, Semiconductor foundry process development, Carrier transport physics, Physics outreach

Email :
reet.chaudhuri @soctera.com

Profiles :
Google Scholar, LinkedIn, ORCID

Book : Integrated Electronics on Aluminum Nitride : Materials and Devices, Springer Nature. [Link]

Hi.

I am a semiconductor materials and device physicist, engineer and innovator. I am currently the co-founder and CTO of Soctera Inc., a US-based semiconductor start-up I co-founded to commercialize my PhD research on aluminium nitride (AlN)-based high-power RF transistors.

I have 10+ years of research and development experience (academic and industry) in the field of semiconductors across Cornell University, Intel Foundry and Nvidia. I specialize in state-of-art transistor development for digital logic and RF amplification using silicon and novel group III-nitride semiconductors.

My fundamental research interest goes beyond transistors into semiconductor device physics, epitaxial crystal growth and carrier transport physics. I have a strong publication and innovation record with over 30+ peer-reviewed journal publications (incl. high-impact work in Science and IEEE IEDM), 30+ conference/invited talks, 4 patents and a book to his name. My doctoral research work laid the foundation for integrated high-frequency electronics on the ultra-wide bandgap AlN platform, and my scientific discovery of the long-missing undoped mobile holes in gallium nitride (GaN) in 2019 led to new insights into wide-bandgap semiconductor physics. 

I am the recipient of Outstanding Doctoral research award from Cornell University. I also hold M.S. degrees in Electrical Engineering and Applied Physics from Cornell, and B.Tech. from National Institute of Technology, Tiruchirapalli (India). 

"Somewhere, something incredible is waiting to be known.

Carl Sagan