TALKS

T6. A wHole new World : Devices and Physics enabled by GaN/AlN 2D Hole Gases

Device Component Research, Intel Corporation, Oregon, PO

July 2019

T5. Wide-bandgap Complementary Nitride FETs

Condensed Matter Physics and Material Science (CMPMS) Seminar, TIFR Bombay India

February 2019

T4. GaN-on-AlN for Complementary Logic on III-Nitrides

IEEE AP/EDS Bombay Chapter Seminar, IIT Bombay India

February 2019

T3. Complementary Logic on III-Nitrides : Is AlN the answer?

Electronic Devices Society (EDS) Seminar, Cornell University, Ithaca NY

September 2018

T2. 2D Electron and Hole Gases in GaN/AlN Heterostructures : Exploiting polarization in III-Nitrides

MSE Graduate Seminar, Cornell University, Ithaca NY

August 2018

T1. III-Nitrides as a platform for next-gen power electronics

Dept. of Applied Physics Guest Lecture Series, National Institute of Technology Surat, India

December 2017

CONFERENCE PRESENTATIONS

C5. Electron-Hole Gas Bilayers in Undoped AlN/GaN/AlN Heterostructures

International Conference on Nitride Semiconductors, Bellevue WA

July 2019

C4. Polarization-induced 2D Hole Gas in undoped GaN/AlN Heterostructures

International Workshop on Nitride Semiconductors (IWN) 2018, Kanazawa, Japan

November 2018

Reet Chaudhuri, Sam Bader, Zhen Chen, David Muller, Huili (Grace) Xing, Debdeep Jena

C3. 2D Hole Gas in GaN/AlN Heterostructures

Electronic Materials Conference (EMC) 2018, UC Santa Barbara, CA

June 2018

Reet Chaudhuri, Sam Bader, Zhen Chen, David Muller, Huili (Grace) Xing, Debdeep Jena

C2. Molecular Beam Epitaxy of High Mobility AlN/GaN/AlN Quantum Well FET Structures on 6H-SiC

International Workshop on Physics of Semiconductor Devices (IWPSD) 2017, New Delhi, India

December 2017

Reet Chaudhuri, Sam Bader, Huili (Grace) Xing, Debdeep Jena

C1. GaN/AlN Quantum Well FETs on AlN/SiC Platform Using High Temperature MBE Growth

Electronic Materials Conference (EMC) 2017, South Bend, IN

June 2017

Reet Chaudhuri, SM Islam, Sam Bader, Huili (Grace) Xing, Debdeep Jena

CO-AUTHORED

Co9. GaN-Based Multi-Channel Transistors with Lateral Gate for Linear and Efficient Millimeter-Wave Power Amplifiers

International Microwave Symposium, Boston MA

June 2019

C. King, E. Regan, J. Bergman, A. Carter, A. Arias, M. Urteaga, B. Brar, R. Page, R. Chaudhuri, SM Islam, K Nomoto, H. Xing, D. Jena

Co8. GaN-Based FETs with Laterally-Gated Multi-2DEG Channels for High Power and Linearity

Government Microcircuit Applications and Critical Technology Conference (2019),

March 2019

C. King, E. Regan, J. Bergman, A. Carter, A. Arias, M. Urteaga, B. Brar, R. Page, R. Chaudhuri, SM Islam, K Nomoto, H. Xing, D. Jena

Co7. GaN-on-AlN as a Superior Platform for Integrated Wide-bandgap Electronics

Government Microcircuit Applications and Critical Technology Conference (2019),

March 2019

S.J. Bader, A. Hickman, R. Chaudhuri, K. Nomoto, H.W. Then, H.G. Xing, D. Jena

Co6. The GaN-on-AlN Platform for Integrated Wide-bandgap Electronics

SRC Student Poster at IEEE International Electron Devices Meeting (2018), San Fransisco CA

December 2018

S.J. Bader, A. Hickman, R. Chaudhuri, K. Nomoto, H.G. Xing, D. Jena,

Co5. Enhancement-mode GaN-on-AlN p-channel HFETs with record on-current

International Workshop on Nitride Semiconductors (IWN) 2018, Kanazawa, Japan

November 2018

S.J. Bader, R. Chaudhuri, S. Bharadwaj, A. Hickman, K. Nomoto, H.W. Then, H.G. Xing, D. Jena

Co4. Development of GaN-Based Field Effect Transistors with Laterally-Gated Multiple 2DEG Channels for High Power and Linearity

International Workshop on Nitride Semiconductors (IWN) 2018, Kanazawa, Japan

November 2018

K. Shinohara, C. King, E. J. Regan, J. Bergman, A. D. Carter, A. Arias, M. Urteaga, B. Brar, R. Page, R. Chaudhuri, SM. Islam, H. Xing, D. Jena

Co3. First RF Strained AlN/GaN/AlN Quantum Well HEMTs on 6H-SiC

International Workshop on Nitride Semiconductors (IWN) 2018, Kanazawa, Japan

November 2018

A. Hickman, S.J. Bader, R. Chaudhuri, K. Nomoto, S. Islam, H.G. Xing, D. Jena

Co2. Development of High-Power High-Linearity GaN BRIDGE FETs with Laterally Gated Multi-2DEG Channels

Lester Eastman Conference (LEC) 2018, Columbus, OH

October 2018

K. Shinohara*, C. King, E. J. Regan, J. Bergman, A. D. Carter, A. Arias, M. Urteaga, B. Brar, R. Page, R. Chaudhuri, SM. Islam, H. Xing, D. Jena

Co1. High-Voltage Properties of Strained GaN Quantum Well HEMTs on AlN

Compound Semiconductor Week (CSW) 2018, Boston MA

May 2018

A. Hickman, S.J. Bader, R. Chaudhuri, K. Nomoto, S. Islam, H.G. Xing, D. Jena